Advances in the understanding of chemical beam epitaxy growth mechanismsMARTIN, T; FREER, R. W; WHITEHOUSE, C. R et al.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 69-77, issn 0022-0248Conference Paper

Ab initio study on the reaction of trimethylgallium with hydrogen moleculeHIRAOKA, Y. S; MASHITA, M.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 94-98, issn 0022-0248Conference Paper

Investigations of the growth of GaAs using stable adducts of gallaneFOORD, J. S; WHITAKER, T. J; O'HARE, D et al.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 127-132, issn 0022-0248Conference Paper

Short-pulse chemical beam epitaxySUIAN ZHANG; JIE CUI; TANAKA, A et al.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 200-203, issn 0022-0248Conference Paper

Surface emitting lasers grown by chemical beam epitaxyMIYAMOTO, T; UCHIDA, T; YOKOUCHI, N et al.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 210-215, issn 0022-0248Conference Paper

Chemical beam epitaxy of InP on planar and non-planar substratesRAO, T. S; LACELLE, C; DAVIES, M et al.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 179-185, issn 0022-0248Conference Paper

Dynamics of island formation in the growth of InAs/InP quantum wellsRUDRA, A; HOUDRE, R; CARLIN, J. F et al.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 278-281, issn 0022-0248Conference Paper

Low carbon incorporation in GaAs grown by chemical beam epitaxy using unprecracked arsine, trimethylgallium and triethylgalliumSEONG-JU PARK; JEONG-RAE RO; JAE-KI SIM et al.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 143-147, issn 0022-0248Conference Paper

Metalorganic molecular beam epitaxy of III-V compounds using tertiarybutyl-V as group-V sourcesSASAKI, Y; FUKUMA, Y; ABE, T et al.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 162-165, issn 0022-0248Conference Paper

Optical properties of InGaAs/InP double-heterostructures selectively grown by chemical beam epitaxyGOTODA, M; NOMURA, Y; ISU, T et al.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 246-249, issn 0022-0248Conference Paper

Chemical beam epitaxy as a breakthrough technology for photovoltaic solar energy applicationsYAMAGUCHI, M; WARABISAKO, T; SUGIURA, H et al.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 29-36, issn 0022-0248Conference Paper

Growth of GaInAs(P)/InP multi-quantum barrier by chemical beam epitaxyINABA, Y; UCHIDA, T; YOKOUCHI, N et al.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 297-301, issn 0022-0248Conference Paper

Controlled carbonization of Si(001) surface using hydrocarbon radicals in ultrahigh vacuumHATAYAMA, T; TARUI, Y; YOSHINOBU, T et al.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 333-337, issn 0022-0248Conference Paper

One-step growth of buried heterostructures by chemical beam epitaxy over patterned InP substratesRUDRA, A; SUGIURA, H; LING, J et al.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 173-178, issn 0022-0248Conference Paper

Optical properties of InAs/AlSb superlattices grown by gas source molecular beam epitaxyKIM, S. G; ASAHI, H; SETA, M et al.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 310-314, issn 0022-0248Conference Paper

Selective-area epitaxy of GaAs using a GaN mask in in-situ processesYOSHIDA, S; SASAKI, M; KAWANISHI, H et al.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 37-41, issn 0022-0248Conference Paper

The growth of resonant tuneling hot electron transistors using chemical beam epitaxyCHEN, W. L; MUNNS, G. O; DAVIS, L et al.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 50-55, issn 0022-0248Conference Paper

Adsorption of carbon-related species onto GaAs(001), (011), and (111) surfaces exposed to trimethylgalliumGOTO, S; OHNO, H; NOMURA, Y et al.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 104-108, issn 0022-0248Conference Paper

Composition changes in Ga_xIn_1-xAs/InP superlattice growth by chemical beam epitaxyYOKOUCHI, N; INABA, Y; UCHIDA, T et al.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 302-305, issn 0022-0248Conference Paper

Some comparisons of chemical beam epitaxy InGaAs/InP growth using triethylgallium, triisopropylgallium and triisobutylgallium sourcesDAVIES, G. J; SKEVINGTON, P. J; MORRIS, J. C et al.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 133-137, issn 0022-0248Conference Paper

Surface reactivity and stability of Ga-deposited GaAs oxide mask for selective area growth of GaAsSASAKI, M; YOSHIDA, S.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 241-245, issn 0022-0248Conference Paper

The role of excess arsenic during the metalorganic molecular beam epitaxial growth of GaAs from trimethylgallium and As₂KANEKO, T; NAJI, O; JONES, T. S et al.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 99-103, issn 0022-0248Conference Paper

Chemical beam epitaxial growth of InGaAs using a new precursor tri-isopropylgalliumCHIU, T. H; WILLIAMS, M. D; STORZ, F. G et al.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 148-151, issn 0022-0248Conference Paper

Growth of n- and p-ZnSe by gas source molecular beam epitaxy using metal Zn and H₂SeIMAIZUMI, M; ENDOH, Y; OHTSUKA, K.-I et al.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 366-370, issn 0022-0248Conference Paper

Influence of hydride purity on InP and InAlAs grown by chemical beam epitaxyMUNNS, G. O; CHEN, W. L; SHERWIN, M. E et al.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 166-172, issn 0022-0248Conference Paper